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Changchun New Industries Optoelectronics Technology Co., Ltd.

HomeProductsLaserHigh Frequency LaserNanosecond Pulse Infrared Diode Laser at 808 nm
Nanosecond Pulse Infrared Diode Laser at 808 nm
  • Nanosecond Pulse Infrared Diode Laser at 808 nm

Nanosecond Pulse Infrared Diode Laser at 808 nm

    Payment Type: T/T,Western Union
    Incoterm: FOB
    Min. Order: 1 Bag/Bags
    Delivery Time: 30 Days

Basic Info

Model No.: MDL-NS-808

Transverse Mode: Near TEM00

Operating Mode: Pulse

Central Wavelength (nm): 808±3

Output Power: 1-100mw

Pulse Width (ps): >10ns,20ns,....,10ms

Internal Trigger: 1Hz-10MHz

User Trigger Frequency: Up To 10MHz

Modulation Dapth: 1000000:1

Beam Divergence,full Angle(mrad): <1.0

Beam Diameter At The Apture: ~3.5

Additional Info

Packaging: Static free plastic bag and carton, Protective packing

Productivity: 500

Brand: CNI

Transportation: Air

Place of Origin: China (Mainland)

Supply Ability: 500

Certificate: ISO9001 FDA CE Rohs

HS Code: 9013200099

Port: Beijing,Shenzhen,Xianggang

Product Description

Product Description

This diode illuminator product integrates a Laser Diode and a driver board whose combination allows generation of nanosecond pulses. Laser diode design and manufacturing benefit from the sound know-how of CNI`s diode department in hard solder technology already developed for quasi-continuous wave laser diodes to ensure efficiency and reliability.

This diode illuminator can generate pulses from 10ns to 10ms with energies depending on the pulse width. It can support high pulse repetition rates (up to 10MHz) with a maximum average power of 100mw.

Specifications

Central wavelength (nm)
808±3
Output power
>1, 10, 20, -,100
Pulse width (FWHM)
>10ns, 20ns, -,10ms
Transverse mode
Near TEM00
Noise of amplitude(rms, CW)
<1%
M 2 factor
<1.5
Beam diameter at the aperture (1/e2 ,mm)
~3.5
Beam divergence, full angle (mrad)
<1.0
Internal trigger (Multifunctional pulse trigger is required)
1Hz~10MHz
User trigger frequency (MHz) (Multifunctional pulse trigger is optional)
up to 10
Rise Time (ns)
<3
Fall Time (ns)
<3
Modulation Depth (extinction ratio)
>1000000:1
Warm-up time (minutes)
<5
Beam height from base plate (mm)
19
Operating temperature (℃)
10~35
Input voltage
+12VDC
Expected lifetime (hours)
10000
Warranty
1 year

Dimensions

MDL-NS-808
Optional Power Supply

pulse laser diode


112(L) ×60(W) ×50(H) mm3, 0.5kg

pulse laser diode


112(L) ×60(W) ×50(H) mm3, 0.5kg

Packaging & Delivery
pulse laser diode

Certifications
pulse laser diode


Company Information

Changchun New Industries Optoelectronics Tech. Co., Ltd. (CNI), founded in 1996, is the leading supplier of lasers, spectrometers, power meters and optical systems in China. CNI is dedicated to offer best quality lasers, laser systems, Optical Spectrum Analyzer, teaching and laboratory equipment, optical measuring equipment, laser processing equipment, machine vision and the photoelectric detection, etc. CNI also design and manufacture precision machinery, optical components and optical coating products.

CNI possesses accountable and dependable service as well as quality products with compact design, high reliability, excellent performance. The products are widely used for scientific research, equipment manufacturing, biomedical experiment, precision measurement, entertainment, radar communication, material processing, process control, online detection, investigation equipment and other fields.


pulse laser diode


Exhibitions
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Customer Visit


pulse laser diode


FAQ
1. What about the delivery?

TNT UPS FEDEX DHL
2. What about the warranty?

For 1 year
3.How to pay?

T/T Western Union

Looking for ideal Pulse Laser Diode Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the Infrared Diode Laser Price are quality guaranteed. We are China Origin Factory of Nanosecond to Second. If you have any question, please feel free to contact us.

Product Categories : Laser > High Frequency Laser

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